EL7563 データシートの表示（PDF） - Renesas Electronics
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EL7563 Datasheet PDF : 16 Pages
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EL7563
Absolute Maximum Ratings (TA = 25°C)
Supply Voltage between VIN or VDD and GND . . . . . . . . . . . . +4.5V
VLX Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VIN +0.3V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V, VDD +0.3V
VHI Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V, VLX +6V
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Operating Ambient Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +135°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
DC Electrical Specifications VDD = VIN = 3.3V, TA = TJ = 25°C, COSC = 390pF, unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
VREF
VREFTC
VREFLOAD
VRAMP
IOSC_CHG
IOSC_DIS
IVDD+VDRV
IVDD_OFF
VDD_OFF
VDD_ON
TOT
THYS
ILEAK
Reference Accuracy
Reference Temperature Coefficient
Reference Load Regulation
Oscillator Ramp Amplitude
Oscillator Charge Current
Oscillator Discharge Current
VDD+VDRV Supply Current
VDD Standby Current
VDD for Shutdown
VDD for Startup
Over Temperature Threshold
Over Temperature Hysteresis
Internal FET Leakage Current
1.24
1.26
50
0 < IREF < 50µA
-1
1.15
0.1V < VOSC < 1.25V
0.1V < VOSC < 1.25V
VEN = 2.7V, FOSC = 120kHz
EN = 0
200
8
2
5.5
1
2.4
2.6
135
20
EN = 0, LX = 3.3V (low FET), LX = 0V
(high FET)
ILMAX
RDSON
RDSONTC
ISTP
Peak Current Limit
FET On Resistance
RDSON Tempco
Auxiliary Supply Tracking Positive Input
Pull Down Current
Wafer level test only
VSTP = VIN/2
5
30
0.2
-4
2.5
ISTN
Auxiliary Supply Tracking Negative Input VSTN = VIN/2
2.5
Pull Up Current
VPGP
VPGN
VPG_HI
VPG_LO
VOVP
VFB
VFB_LINE
VFB_LOAD
VFB_TC
IFB
VEN_HI
VEN_LO
IEN
Positive Power Good Threshold
Negative Power Good Threshold
Power Good Drive High
Power Good Drive Low
Over Voltage Protection
Output Initial Accuracy
Output Line Regulation
Output Load Regulation
Output Temperature Stability
Feedback Input Pull Up Current
EN Input High Level
EN Input Low Level
Enable Pull Up Current
With respect to target output voltage
With respect to target output voltage
IPG = 1mA
IPG = -1mA
ILOAD = 0A
VIN = 3.3V, VIN = 10%, ILOAD = 0A
0.5A < ILOAD < 4A
-40°C < TA < 85°C, ILOAD = 2A
VFB = 0V
6
-16
2.7
0.977
10
0.992
0.5
0.5
±1
100
VEN = 0
1
-4
-2.5
MAX
1.28
6.5
1.5
2.65
2.95
10
UNIT
V
ppm/°C
%
V
µA
mA
mA
mA
V
V
°C
°C
µA
A
60
m
m/°C
µA
4
µA
16
%
-6
%
V
0.5
V
%
1.007
V
%
%
%
200
nA
2.7
V
V
µA
FN7296 Rev 2.00
May 13, 2005
Page 3 of 16
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