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ICS670-02 データシートの表示(PDF) - Integrated Device Technology

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ICS670-02
IDT
Integrated Device Technology IDT
ICS670-02 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
ICS670-02
LOW PHASE NOISE ZERO DELAY BUFFER AND MULTIPLIER
ZDB AND MULTIPLIER
Parameter
Short Circuit Current
Internal Pull-up Resistor
Input Capacitance
Symbol
Conditions
IOS Each output
RPU OE, select pins
CIN OE, select pins
Min.
Typ.
±50
200
5
Max.
Units
mA
k
pF
AC Electrical Characteristics
VDD = 3.3V ±10%, Ambient Temperature -40 to +85° C, unless stated otherwise
Parameter
Symbol
Conditions
Min. Typ. Max. Units
Input Clock Frequency
Output Clock Frequency
fIN
See table on page 2
5
160 MHz
160 MHz
Output Rise Time
Output Fall Time
Output Clock Duty Cycle
Input to Output Skew
tOR 0.8 to 2.0 V, no load
tOF 2.0 to 0.8 V, no load
tDC measured at VDD/2
Note 1
1.5 ns
1.5 ns
45
50 55
%
±100
ps
Maximum Absolute Jitter
short term
±45
ps
Maximum Jitter
one sigma
15
ps
Phase Noise, relative to
carrier, 125 MHz (x5)
100 Hz offset
1 kHz offset
-103
-117
dBc/Hz
dBc/Hz
10 kHz
-111
dBc/Hz
200 kHz
-88
dBc/Hz
Note 1: Rising edge of ICLK compared with rising edge of CLK2, with FBCLK connected to FBIN, and 15 pF load
on CLK2.
Thermal Characteristics
Parameter
Symbol Conditions
Thermal Resistance Junction to
Ambient
θJA Still air
θJA 1 m/s air flow
θJA 3 m/s air flow
Thermal Resistance Junction to Case θJC
Min.
Typ.
120
115
105
58
Max. Units
° C/W
° C/W
° C/W
° C/W
IDT™ / ICS™ LOW PHASE NOISE ZERO DELAY BUFFER AND MULTIPLIER 4
ICS670-02 REV J 051310

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