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IS62LV12816L データシートの表示(PDF) - Integrated Silicon Solution

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IS62LV12816L
ISSI
Integrated Silicon Solution ISSI
IS62LV12816L Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
IS62LV12816L/LL
ISSI ®
OPERATING RANGE
Range
Ambient Temperature
VCC
Commercial
0°C to +70°C
2.5V - 3.0V
1
Industrial
40°C to +85°C
2.5V - 3.0V
2
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM
Parameter
Terminal Voltage with Respect to GND
Value
0.5 to Vcc+0.5
Unit
V
3
TBIAS
Temperature Under Bias
40 to +85
°C
VCC
TSTG
PT
Vcc Related to GND
Storage Temperature
Power Dissipation
0.3 to +4.0
V
65 to +150
°C
4
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
5
rating conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
VOH
Output HIGH Voltage
VCC = Min., IOH = 1 mA
VOL
Output LOW Voltage
VCC = Min., IOL = 2.1 mA
VIH
Input HIGH Voltage
VIL(1)
Input LOW Voltage
ILI
Input Leakage
GND VIN VCC
ILO
Output Leakage
GND VOUT VCC, Outputs Disabled
Notes:
1. VIL (min.) = 2.0V for pulse width less than 10 ns.
6
Min.
Max.
7 Unit
2.0
V
0.4
V
2.2 VCC + 0.2
V
8
0.2
0.4
V
1
1
µA
1
1
9 µA
10
CAPACITANCE(1)
11
Symbol Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
COUT
Input/Output Capacitance
VOUT = 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
12
Integrated Silicon Solution, Inc. 1-800-379-4774
3
Rev. C
03/17/00

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