isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS= 0V; ID = 250μA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID = 1mA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 51A
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS=0V
IDSS
Drain-Source Leakage Current
VSD
Diode forward voltage
VDS= VDSS; VGS= 0V
VDS= VDSS; VGS= 0V;TJ= 150℃
IF= 100A; VGS = 0V
IXTP102N15T
MIN MAX UNIT
150
V
3.0
5.0
V
18
mΩ
±200
nA
5
μA
250
1.3
V
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our products.
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