IXTP102N15T データシートの表示（PDF） - Inchange Semiconductor
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IXTP102N15T Datasheet PDF : 2 Pages
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isc N-Channel MOSFET Transistor
IXTP102N15T
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤ 18mΩ@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converters
·High Speed Power Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
150
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
102
IDM
Drain Current-Single Pulsed
300
PD
Total Dissipation @TC=25℃
455
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT
V
V
A
A
W
℃
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Junction-to-case thermal resistance
MAX
0.33
UNIT
℃/W
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