IXTP10N60PM データシートの表示（PDF） - IXYS CORPORATION
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IXTP10N60PM Datasheet PDF : 2 Pages
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IXTP 10N60PM
Symbol
gfs
C
iss
C
oss
Crss
td(on)
tr
td(off)
t
f
Qg(on)
Qgs
Qgd
R
thJS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDS= 10 V; ID = 5 A, pulse test
6
11
S
V = 0 V, V = 25 V, f = 1 MHz
GS
DS
1610
pF
165
pF
14
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A
RG = 10 Ω (External)
20
ns
24
ns
55
ns
18
ns
VGS= 10 V, VDS = 0.5 VDSS, ID = 5 A
32
nC
11
nC
10
nC
2.5 °C/W
ISOLATED TO-220 (IXTP...M)
12 3
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0 V
10 A
ISM
Repetitive
30 A
V
I = I , V = 0 V,
SD
F S GS
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
1.5 V
trr
IF = 9 A, -di/dt = 100 A/μs
VR = 100V
500
ns
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585
6,710,405B2 6,759,692
6,710,463
6,771,478 B2
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