IXTP10N60P データシートの表示（PDF） - Inchange Semiconductor
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IXTP10N60P Datasheet PDF : 2 Pages
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isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID = 250μA
VGS(th) Gate Threshold Voltage
VDS=VGS; ID = 250μA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 5A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS=0V
IDSS
Drain-Source Leakage Current
VSD
Diode forward voltage
VDS= VDSS; VGS= 0V
VDS= VDSS; VGS= 0V;TJ= 125℃
IF= 10A; VGS = 0V
IXTP10N60P
MIN MAX UNIT
600
V
3.0
5.5
V
740
mΩ
±100
nA
5
μA
50
1.5
V
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
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