IXTP10N60P データシートの表示（PDF） - Inchange Semiconductor
部品番号
コンポーネント説明
メーカー
IXTP10N60P Datasheet PDF : 2 Pages
| |||
isc N-Channel MOSFET Transistor
IXTP10N60P
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤ 740mΩ@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converter
·Switch-Mode and Resonant-Mode Power Supplies
·Uninterrupted Power Supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
10
IDM
Drain Current-Single Pulsed
25
PD
Total Dissipation @TC=25℃
200
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
℃
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Junction-to-case thermal resistance
MAX
0.625
UNIT
℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
Share Link: 