BU810 データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
一致するリスト
BU810 Datasheet PDF : 4 Pages
| |||
BU810
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.66
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE = 0)
ICEO
Collector Cut-off
Current (IB = 0)
IEBO∗
Emitter Cut-off
Current (IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
VCE = 600 V
VCE = 400 V
VEB = 5 V
IC = 0.1 A
200 µA
1
mA
150 mA
400
V
VCE(sat)∗ Collector-Emitter
IC = 2 A
IB = 20 mA
2
V
t(s) VBE(sat)∗
c VF
Saturation Voltage
IC = 4 A
IC = 7 A
Base-Emitter
Saturation Voltage
IC = 2 A
IC = 4 A
Diode Forward Voltage IF = 7 A
IB = 200 mA
IB = 0.7 A
IB = 20 mA
IB = 200 mA
rodu RESISTIVE SWITCHING TIMES
P Symbol
te ton
le ts
tf
Parameter
Turn-on Time
Storage Time
Fall Time
Test Conditions
VClamp = 250V IC = 2A IB1 = 20mA
VBE(off) = -5 V
Min.
Typ.
2.5
3
2.2
3
3
Max.
0.6
1.5
0.5
V
V
V
V
V
Unit
µs
µs
µs
bso INDUCTIVE SWITCHING TIMES
- O Symbol
Parameter
Test Conditions
t(s) ts
Storage Time
tf
Fall Time
VClamp = 250V IC = 2A IB1 = 20mA
VBE(off) = -5 V L = 500µH
uc ts
Storage Time
VClamp = 250V
d tf
Fall Time
VBE(off) = -5 V
Obsolete Pro * Pulsed : Pulse duration = 300 µs, duty cycle = 2%
IC = 7A IB1 = 0.7A
L = 500µH
Min.
Typ.
Max.
1.5
0.4
1.5
0.4
Unit
µs
µs
µs
µs
2/4
Share Link: 