MV21003 データシートの表示（PDF） - Microsemi Corporation
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MV21003 Datasheet PDF : 2 Pages
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TM
®
Features
● High Q Values for Higher Frequency Performance
● Constant Gamma Design
● Low Reverse Current
● Available as Chip or Packaged Diodes
● Available in Chip-on-Board Packaging
● Custom Designs Available
Applications
● VCOs
● Phase-Locked Oscillators
● High Q Tunable Filters
● Phase Shifters
● Pre-Selectors
Maximum Ratings
Reverse Voltage
Forward Current
Incident Power
Operating Temperature
Storage Temperature
Breakdown Voltage
50 mA @ 25°C
+20 dBm @ 25°C
-55°C to +175°C
-55°C to +200°C
GaAs Varactor Diodes
Abrupt Junction
MV20001 – MV21010
Description
Microsemi’s GaAs abrupt junction varactors are
fabricated from epitaxial layers grown at
Microsemi using Chemical Vapor Deposition. The
layers are processed using proprietary techniques
resulting in a high Q factor and very repeatable
tuning curves. The diodes are available in a variety
of microwave ceramic packages or chips for
operation from UHF to millimeter wave
frequencies.
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information.
These devices are ESD sensitive and must be handled using ESD precautions.
1 The MV20000 Series of products are
. supplied with a RoHS complaint Gold finish
Copyright 2008
Rev: 2009-05-11
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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