1N5614C データシートの表示（PDF） - Semtech Corporation

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1N5614C

200V-1000V Axial Leaded Fast Avalanche Rectifier Diode

Semtech Corporation 

HIGH-RELIABILITY PRODUCTS

Features

VR = 200V to 1000V

IR = 0.5µA

Trr = 3.0μs

VF = 1.2V at IF = 1A

1N5614C THRU 1N5622C

200V-1000V Axial Leaded

Fast Avalanche Rectifier Diode

Quick Reference Data

‹‹ Low reverse leakage current

‹‹ Hermetically sealed

‹‹ Good thermal shock resistance

‹‹ Fast Trr

‹‹ Low forward voltage drop

Absolute Maximum Ratings

Electrical specifications @ TA = 25oC unless otherwise specified.

Parameter

1N5614C 1N5616C 1N5618C

1N5620C

Maximum Reccurrent Peak Reverse Voltage

VRRM

200

400

600

800

Maximum DC blocking Voltage

VDC

200

400

600

800

Maximum Average Forward Rectified Current

0.375” (9.5mm) lead length at TA=55oC

IF(av)

1.0

Peak Forward Surge Current 8.3ms single Half

50.0

sinewave superimposed on rated load

IFSM

Maximum Instantaneous Forward Voltage at

VF

1.2

1.0A

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IR

0.5

25

Maximum Reverse Recovery Time(1)

Trr

3.0

Typical Junction Capacitance(2)

C

45.0

Maximum Reverse Breakdowm Voltage IR=50 μA

VBR

220

440

Typical Thermal Resistance(3)

RθJL

Storage and Operating Juntion Temperature

TSTG,

TJ

Note:

1. Reverse Recovery Condition IF =0.5A, IR =1.0A, IRR =0.25A

2. Measured at 1.0 MHz and applied reverse voltage of 12Vdc

3. Thermal Resistance from Junction to Ambient at 3/8”lead length.

660

880

55.0

-65 to +175

1N5622C

1000

1000

1100

Units

V

V

A

A

V

μA

μs

pF

V

oC/W

oC

1N5614C THRU 1N5622C

Final Datasheet

14/08/2017

Rev 1.0

www.semtech.com

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