BDX63 データシートの表示（PDF） - TT Electronics.
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BDX63 Datasheet PDF : 3 Pages
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NPN EPITAXIAL BASE
DARLINGTON POWER TRANSISTOR
BDX63 / BDX63A / BDX63B / BDX63C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
IE = 0 VCB = VCEOmax
ICBO
Collector – Base Cut-Off
Current
IE = 0 VCB = ½VCBOmax
TA = 150°C
ICEO
Collector – Emitter Cut-Off
Current
IB = 0 VCE = ½VCEOmax
IEBO
Emitter – Base Cut-Off Current IC = 0
VEB = 5V
hFE(1)
VBE(1)
DC Current Gain
Base – Emitter Voltage
IC = 0.5A
IC = 3A
IC = 8A
IC = 3A
VCE = 3V
VCE = 3V
VCE = 3V
VCE = 3V
VCE(sat)
Collector – Emitter Saturation
Voltage
IC = 3A
IB = 12mA
Min.
1000
Typ
1475
5200
Max.
0.2
2
0.5
5
2.5
2
Units
mA
-
V
VF
Diode, Forward Voltage
IF = 3A
0.86
DYNAMIC CHARACTERISTICS
COBO
Output Capacitance
IE = 0
VCB = 10V
f = 1.0MHz
150
pF
fhfe(2)
Cut-Off Frequency
IC = 3A
VCE = 3V
100
kHz
|hfe|(2)
Small Signal Current Gain
IC = 3A
VCE = 3V
f = 1.0MHz
100
-
Notes
(1) Pulse Width ≤ 380us, δ ≤ 2%
(2) Not a Production Test, By Design Only
Semelab Limited
Telephone: +44 (0) 1455 556565
Fax: +44 (0) 1455 552612
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number: 10935
Issue: 1
Page: 2 of 3
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