MA2J7290G データシートの表示（PDF） - Panasonic Corporation
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MA2J7290G Datasheet PDF : 4 Pages
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This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2J7290G
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
/ • Forward current (Average) IF(AV) = 200 mA rectification is
possible
e • High-density mounting is possible
nc d le stage. ■ Absolute Maximum Ratings Ta = 25°C
yc Parameter
Symbol Rating
Unit
a e lifec Reverse voltage
VR
30
V
ct Repetitive peak reverse voltage
VRRM
30
V
n u rodu Forward current (Average)
IF(AV)
200
mA
P Peak forward current
IFM
300
mA
te tin four Non-repetitive peak forward
IFSM
1
A
g e . surge current *
win typ tion Junction temperature
in n follo ance pe ed rma Storage temperature
Tj
150
°C
Tstg
−55 to +150
°C
a o ludes inten e ty typ info n/ Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Package
• Code
SMini2-F3
• Pin Name
1: Anode
2: Cathode
■ Marking Symbol: 2B
c ed inc ed ma tenanc tinued type latest o.jp/e ■ Electrical Characteristics Ta = 25°C ± 3°C
M is tinu lan ain con ed ut ic.c Parameter
Symbol
Conditions
Min Typ Max Unit
p m dis tinu abo son Forward voltage
con ed on L na Reverse current
is lan isc UR .pa Terminal capacitance
Dance/D p dllowing micon Reverse recovery time *
VF
IF = 200 mA
IR
VR = 30 V
Ct
VR = 0 V, f = 1 MHz
trr
IF = IR = 100 mA
Irr = 0.1 IR, RL = 100 Ω
0.55
V
50
µA
30
pF
3.0
ns
ten fo .se Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
in it w 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
Ma e vis ://ww and the leakage of current from the operating equipment.
as ttp 3. Absolute frequency of input and output is 1 GHz.
Ple h 4. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 0.1 IR
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Publication date: October 2007
SKH00172AED
1
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