2N6051 データシートの表示（PDF） - Inchange Semiconductor

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2N6051

Silicon PNP Darlingtion Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlingtion Power Transistor

isc Product Specification

2N6051

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0

-80

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -6A; IB= -24mA

-2.0

V

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -12A; IB= -120mA

-3.0

V

VBE(sat) Base-Emitter Saturation Voltage

IC= -12A; IB= -120mA

4.0

V

VBE(on) Base-Emitter On voltage

IC= -6A; VCE= -3V

-2.8

V

ICEO

Collector Cutoff current

ICEX

Collector Cutoff current

IEBO

Emitter Cut-off current

VCE= -40V; IB=0

VCE= -80V; VBE(off)= -1.5V

VCE= -80V; VBE(off)= -1.5V,TC=150℃

VEB= -5V; IC= 0

-1.0

mA

-0.5

-5.0

mA

-2.0

mA

hFE-1

DC Current Gain

IC= -6A; VCE= -3V

750 18000

hFE-2

DC Current Gain

IC= -12A; VCE= -3V

100

COB

Output Capacitance

IE=0; VCB= -10V; ftest= 0.1MHz

500

pF

isc website：www.iscsemi.com

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