2N3375 データシートの表示（PDF） - Advanced Semiconductor
部品番号
コンポーネント説明
一致するリスト
2N3375 Datasheet PDF : 1 Pages
| |||
2N3375
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N3375 is Designed for
Class A,B,C Amplifier,Oscillator and
Driver Applications Covering the
VHF-UHF Region.
FEATURES INCLUDE:
• Isolated Package
MAXIMUM RATINGS
IC
1.5 A
VCE
PDISS
TJ
TSTG
θJC
40 V
11.6 W @ TC = 25 OC
-65OC to +200 OC
-65OC to +200 OC
15 OC/W
PACKAGE STYLE TO- 60(ISOLATED)
1 = EMITTER 2 = BASE
3 = COLLECTOR
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 200 mA
BVCEX
VBE = -1.5 V IC = 100 mA
BVCBO
IC = 500 µA
ICEO
VCE = 30 V
IEBO
VEB = 4.0 V
hFE
VCE = 5.0 V IC = 250 mA
VCE(SAT)
IC = 500 mA IB = 100 mA
MINIMUM TYPICAL MAXIMUM
40
65
65
100
100
10
1.0
UNITS
V
V
V
µA
µA
---
V
Cob
VCB = 30 V
ft
VCE = 28 V IC = 150 mA
f = 1.0 MHz
f = 100 MHz
10
pF
500
MHz
Pout
3.0
W
GP
VCE = 28 V
Pin = 1.0 W
f = 400 MHz
4.8
dB
η
40
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
Share Link: 