2N5172 データシートの表示（PDF） - Continental Device India Limited
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2N5172 Datasheet PDF : 3 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
2N5172
TO-92
Plastic Package
ECB
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
VCEO
VCBO
VEBO
IC
PD
PD
Tj, Tstg
25
25
5
100
625
5
1.5
12
- 55 to +150
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
Rth(j-a)
Rth(j-c)
200
83.3
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Emitter Voltage
Collector Cut Off Current
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter On Voltage
VCEO IC=10mA,IB=0
25
ICBO VCB=25V, IE=0
VCB=25V,IE=0,Ta=100ºC
ICES VCE =25V, VBE=0V
IEBO VEB=5V, IC = 0
hFE VCE=10V,IC=10mA
100
VCE(sat) IC=10mA,IB=1mA
VBE(sat) IC=10mA,IB=1mA
VBE(on) VCE=10V,IC=10mA
0.5
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
Collector Base Capacitance
Small Signal Current Gain
fT
IC=2mA, VCE=5V
CCb IE=0, VCB=0V,f=1MHz
1.6
hfe VCE =10V,IC=10mA
100
f=1kHz
TYP
0.75
120
MAX
100
10
100
100
500
0.25
1.2
10
750
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
UNITS
nA
µA
nA
nA
V
V
V
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 3
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