MA3X1000G データシートの表示（PDF） - Panasonic Corporation
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MA3X1000G Datasheet PDF : 4 Pages
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This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA3X1000G
Silicon epitaxial planar type
For switching circuits
■ Features
• High breakdown voltage: VR = 200 V
/ • Small terminal capacitance Ct
e e. ■ Absolute Maximum Ratings Ta = 25°C
c tag Parameter
Symbol Rating
Unit
n d le s Reverse voltage
VR
200
V
a e cyc Repetitive peak reverse voltage VRRM
250
V
life Forward current (Average)
IF(AV)
100
mA
n u uct Repetitive peak forward current
IFRM
225
mA
rod Non-repetitive peak forward
IFSM
500
mA
P surge current *
te tin ur Junctiontemperature
ing fo type n. Storage temperature
Tj
150
°C
Tstg
−55 to +150
°C
in n llow e tio Note) *:t=1s
■ Package
• Code
SMini3-F2
• Pin Name
1: Anode
2: N.C.
3: Cathode
■ Marking Symbol: M3A
■ Internal Connection
3
1
2
Ma isctoinued inlcalnueddesmfaaoiinntteenniasancncocenttiynpuueeeddttyyppoeeudt latesnticin.cfoo.rjmp/aen/ ■ Electrical Characteristics Ta = 25°C ± 3°C
on p m d d ntin ab aso Parameter
Symbol
Conditions
Min Typ Max Unit
isc ne co RL an Forward voltage
/D pla dis g U n.p Reverse current
e in ico Terminal capacitance
Dintenanc it followw.sem Reverse recovery time *
VF
IF = 100 mA
IR
VR = 200 V
Ct
VR = 0 V, f = 1 MHz
trr
IF = IR = 10 mA
Irr = 1 mA , RL = 100 Ω
1.2
V
1.0
µA
3.0
pF
60
ns
Ma e vis ://ww Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 20 MHz.
leas http 3. *: trr measurement circuit
P Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = IR = 10 mA
RL = 100 Ω
Publication date: October 2007
SKF00088AED
1
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