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Production specification
Silicon Epitaxial Planar Diode
BAV16WS
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Symbol
V(BR)R
VF
Reverse Current
IR
Capacitance between
CT
terminals
Reverse Recovery Time
trr
Min Max Unit
75
-
V
-
0.715 V
0.855
1.0
1.25
-
1.0
μA
25
nA
-
2.0
pF
-
4.0
ns
Test Condition
IR=1.0μA
IF=1.0mA
IF=10mA
IF=50mA
IF=150mA
VR=75V
VR=20V
VR=0,f=1.0MHz
IF=IR=10mA,
Irr=0.1×IR,RL=100Ω
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
B017
Rev.A
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