BAW156 データシートの表示（PDF） - TY Semiconductor

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BAW156

Low-leakage double diode

TY Semiconductor 

Product specification

BAW156

Features

Plastic SMD package

Low leakage current: typ. 3 pA

Switching time: typ. 0.8 s

Continuous reverse voltage:max. 75 V

Repetitive peak reverse voltage:max. 85 V

Repetitive peak forward current:max. 500 mA.

SOT-23

2.9+0.1

-0.1

0.4+0.1

-0.1

3

1

2

0.95+0.1

-0.1

1.9+0.1

-0.1

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Conditions

Min

Repetitive peak reverse voltage

VRRM

Continuous reverse voltage

VR

Continuous forward current

single diode loaded;note 1

IF

double diode loaded; note 1

Repetitive peak forward current

IFRM

square wave; Tj = 25 prior to surge

Non-repetitive peak forward current

IFSM

t=1 s

t = 1 ms

t=1s

Total power dissipation

Ptot

Tamb 25 ; note 1

Storage temperature

Tstg

-65

Junction temperature

Tj

thermal resistance from junction to tie-point

Rth j-t p

thermal resistance from junction to ambient

Rth j-a

Note

1. Device mounted on an FR4 printed-circuit board.

Unit: mm

0.1+0.05

-0.01

1.Base

2.Emitter

3.collector

Max

Unit

85

V

75

V

160

mA

140

500

mA

4

A

1

0.5

250

mW

+150

150

360

K/W

500

K/W

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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