SSI1N50B データシートの表示（PDF） - Fairchild Semiconductor
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SSI1N50B Datasheet PDF : 9 Pages
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
IVDG=S =2500Vμ
A
0.8
-100
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
101
is Limited by R DS(on)
100 µs
1 ms
100
10 ms
DC
10-1
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V = 10 V
GS
2. ID = 0.75 A
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs Temperature
1.8
1.5
1.2
0.9
0.6
0.3
0.0
25
50
75
100
125
150
T , Case Temperature [℃]
C
Figure 10. Maximum Drain Current
vs Case Temperature
D = 0.5
100
0.2
0.1
0.05
1 0 -1
0.02
0.01
sin gle pu lse
※ N otes :
1. Z θ JC(t) = 3.44 ℃ /W M ax.
2. D uty Factor, D =t /t
12
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S qu a re W ave P u lse D u ra tion [se c]
Figure 11. Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
Rev. C, May 2002
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