SM712 データシートの表示（PDF） - Littelfuse, Inc
部品番号
コンポーネント説明
一致するリスト
SM712 Datasheet PDF : 5 Pages
| |||
TVS Diode Arrays (SPA®®DDiiooddeess))
General Purpose ESD Protection - SM712
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
PPk
Peak Pulse Power (tp=8/20μs)
600
W
IPP
Peak Pulse Current (tp=8/20μs)
19
A
TOP
Operating Temperature
-40 to 125
°C
TSTOR
Storage Temperature
-55 to 150
°C
Notes:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above
those indicated in the operational sections of this specification is not implied.
SM712 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Reverse Standoff Voltage VRWM
IR≤1μA, Pin 3 to Pin 1 or Pin 2
IR≤1μA, Pin 1 or Pin 2 to Pin 3
Reverse Breakdown
Voltage
VR
IR=1mA, Pin 3 to Pin 1 or Pin 2
IR=1mA, Pin 1 or Pin 2 to Pin 3
7.5
13.3
Leakage Current
ILEAK
VR=7V
VR=12V
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
Clamp Voltage1
VC
IPP=1A, tp=8/20µs, Pin 3 to Pin 1 or Pin 2
IPP=19A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3
IPP=19A, tp=8/20µs, Pin 3 to Pin 1 or Pin 2
7.0
V
12.0
V
V
V
20
μA
1
μA
19
V
11
V
31
V
19
V
Dynamic Resistance1
RDYN
(VC2 - VC1) / (IPP2 - IPP1)
0.5
Ω
IEC 61000-4-2 (Contact Discharge)
±30
kV
ESD Withstand Voltage1
VESD
IEC 61000-4-2 (Air Discharge)
±30
kV
Diode Capacitance1
CI/O-GND
Reverse Bias=0V, f=1MHz;
Pin 1 or Pin 2 to Pin 3
75
pF
Notes : 1. Parameter is guaranteed by design and/or device characterization.
Capacitance vs. Reverse Bias
80
70
60
50
40
30
20
10
0
0
2
4
6
8
Bias Voltage (V)
10
12
Clamping Voltage vs. IPP
35
30
25
Pin 1 or Pin 2 to Pin 3
20
15
Pin 3 to Pin 1 or Pin 2
10
5
0
0 2 4 6 8 10 12 14 16 18 20
Peak Pulse Current-IPP (A)
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/09/17
Share Link: 