RFM12N08 データシートの表示（PDF） - New Jersey Semiconductor
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RFM12N08 Datasheet PDF : 2 Pages
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RFM12N08, RFM12N10, RFP12N08, RFP12N10
Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified
RFM12N08 RFM12N10 RFP12N08 RFP12N10 UNITS
Drain to Source Voltage (Note 1)
VDSS
80
100
80
100
V
Drain to Gate Voltage (RGs = 20kQ) (Note 1)
Continuous Drain Current
Pulsed Drain Current (Note 3)
VDGR
80
Irj
12
IDM
30
100
80
12
12
30
30
100
V
12
A
30
A
Gate to Source Voltage
VQS
±20
±20
±20
±20
V
Maximum Power Dissipation
Linear Derating Factor
Pp
75
0.6
75
60
60
W
0.6
0.48
0.48
W/°C
Operating and Storage Temperature
Tj TSJQ -55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief 334
TL
300
300
300
300
°C
Tpkg
260
260
260
260
°C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Tj = 25°Cto 125°C.
Electrical Specifications Tc = 25°C, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
RFM12N08, RFP12N08
RFM12N10, EFP12N10
SYMBOL
TEST CONDITIONS
BVDSS ID = 250nA, VGS = ov
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH) VGS = VDS. ID = 250(iA (Figure 8)
!DSS
VDS = Rated BVDSs, VGs = OV
VDS = 0.8 x Rated BVDSSi Tc = 125°C
'GSS VGS = ±2ov, VDS = ov
rDS(ON) ID = 12A, VGS = 10V (Figures 6, 7)
VDS(ON) ID = 12A,VGS = 10V
td(ON)
tr
VDD = sov, iD = 6A, RG = son,
vGs = iov, RL = sn,
(Figures 10, 11, 12)
'd(OFF)
tf
CISS
CQSS
VDS = 25V, VGS = OV, f = 1 MHz
(Figure 9)
CRSS
Rejc
RFM12N08, RFM12N10
RFP12N08, RFP12N10
Source to Drain Diode Specifications
PARAMETER
Source to Drain Voltage (Note 2)
Reverse Recovery Time
SYMBOL
VSD
trr
TEST CONDITIONS
ISD = 6A
ISD = 4A, dlSD/dt = 100A/J1S
MIN
80
100
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MIN
-
-
TYP
-
-
-
-
-
-
-
-
45
250
85
100
-
-
-
-
-
MAX UNITS
-
-
4
1
25
±100
0.200
2.4
70
375
130
150
850
300
150
1.67
2.083
V
V
V
HA
^A
nA
n
V
ns
ns
ns
ns
PF
PF
PF
°C/W
°C/W
TYP
MAX UNITS
-
1.4
V
150
-
ns
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