2SD1615(1995) データシートの表示（PDF） - NEC => Renesas Technology

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2SD1615
(Rev.:1995)

NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD

NEC => Renesas Technology 

2SD1615, 2SD1615A

1000

500

200

100

50

GAIN BANDWIDTH PRODUCT vs.

EMITTER CURRENT

VEC = 2.0 V

20

10

5

2

1

0.01 0.02 0.05 0.1 0.2 0.5 1 2

IC – Collector Current – A

5 10

SWITCHING TIME vs.

COLLECTOR CURRENT

2

VCC

IC =

=101.0IBIV=

–10.IB2

VPBWE(o=f.f.)

=

2

–2

µs

to

3

V

1

Duty Cycle ≤ 2 %

tstg

0.5

0.2

0.1

0.05

tf

ton

0.01 0.02 0.05 0.1 0.2

IC – Collector Current – A

0.5 1

OUTPUT CAPCITANCE vs.

COLLECTOR TO BASE VOLTAGE

100

IE = 0

f = 1.0 MHZ

50

20

10

5

2

1

2

5 10 20

50 100

VCB – Collector to Base Voltage – V

REFERENCE

Document Name

NEC semiconductor device reliability/quality control system.

Quality grade on NEC semiconductor devices.

Semiconductor device mounting technology manual.

Semiconductor device package manual.

Guide to quality assurance for semiconductor devices.

Semiconductor selection guide.

Document No.

TEI-1202

IEI-1209

IEI-1207

IEI-1213

MEI-1202

MF-1134

3

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