C4900 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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C4900

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

S11 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

10

0

.2 .4 .6 1.0 1.5 2 3 4 5 10

–10

–.2

–.4

–.6 –.8 –1

–5

–4

–3

–2

–1.5

Condition: VCE = 5 V , Zo = 50 Ω

200 to 2000 MHz (200 MHz step)

(I C = 5 mA)

(I C = 20 mA)

2SC4900

S21 Parameter vs. Frequency

120°

90° Scale: 4 / div.

60°

150°

30°

180°

0°

–150°

–30°

–120°

–90°

–60°

Condition: VCE = 5 V , Zo = 50 Ω

200 to 2000 MHz (200 MHz step)

(I C = 5 mA)

(I C = 20 mA)

S12 Parameter vs. Frequency

120°

90° Scale: 0.1 / div.

60°

150°

30°

180°

0°

–150°

–30°

–120°

–90°

–60°

Condition: VCE = 5 V , Zo = 50 Ω

200 to 2000 MHz (200 MHz step)

(I C = 5 mA)

(I C = 20 mA)

S22 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

10

0

.2 .4 .6 .8 1.0 1.5 2 3 4 5 10

–10

–.2

–.4

–.6

–.8 –1

–5

–4

–3

–2

–1.5

Condition: VCE = 5 V , Zo = 50 Ω

200 to 2000 MHz (200 MHz step)

(IC = 5 mA)

(IC = 20 mA)

5

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