C4510 データシートの表示（PDF） - New Jersey Semiconductor

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C4510

Silicon NPN Power Transistor

New Jersey Semiconductor 

, Una.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon NPN Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SC4510

DESCRIPTION

• High Collector-Emitter Sustaining Voltage-

: VCEO(Sus)= 400V(Min.)

• High Switching Speed

• High Reliability

• Low Collector Saturation Voltage

APPLICATIONS

• Switching regulators

• DC-DC converter

• Solid state relay

• General purpose power amplifiers

PIN 1.BASE

2.COLLECTOR

3.B/1ITTER

TO-3PML Package

ABSOLUTE MAXIMUM RATINGS(Ta=25r)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

500

V

\, ' ^ i !

I'

Z

VCEO

VEBO

Ic

IB

PC

Tj

Tstg

Collector-Emitter Voltage

Emitter-Base voltage

Collector Current-Continuous

Base Current-Continuous

Collector Power Dissipation

@ TC=25'C

Junction Temperature

Storage Temperature Range

400

V

10

V

15

A

5

A

80

W

150

•c

-55-150

r

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Thermal Resistance,Junction to Case 1.56 "CM/

mm

DIM MIN

A 19.90

B 15.90

C 5.60

D 0.90

F 3,30

G 2.&0

H 5.90

J 0.595

MAX

20.10

16.10

5.70

1.10

3.50

3.10

6.10

0.605

K 22.30 22.50

L 1.90 2.10

N 10.80 11.00

Q 4.90 5.10

R 3.75 3.95

S 3,20 3.40

u 9.90 10.10

V 4JO 4,90

z 1.90 2.10

-—D

N.I Semi-Conductors reserves the right lo ehange test conditions, parameter limits and package dimensions \vithout

notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. I lowever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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