IXFR120N20 データシートの表示（PDF） - IXYS CORPORATION

部品番号

コンポーネント説明

一致するリスト

IXFR120N20

HiPerFET™ Power MOSFET (Electrically Isolated Tab)

IXYS CORPORATION 

HiPerFETTM

Power MOSFET

(Electrically Isolated Tab)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

IXFR120N20

VDSS =

ID25 =

 RDS(on)

trr



200V

105A

19.5m

250ns

ISOPLUS247

E153432

Symbol

VDSS

VDGR

VGSS

VGSM

ID25

ILRMS

IDM

IA

EAS

dv/dt

PD

TJ

TJM

Tstg

TL

TSOLD

VISOL

FC

Weight

Test Conditions

TJ = 25C to 150C

TJ = 25C to 150C, RGS = 1M

Continuous

Transient

TC = 25C

Terminal Current Limit

TC = 25C, Pulse Width Limited by TJM

TC = 25C

TC = 25C

IS  IDM, VDD  VDSS, TJ  150C

TC = 25C

Maximum Lead Temperature for Soldering

Plastic Body for 10s

50/60 Hz, 1 Minute

Maximum Ratings

200

V

200

V

20

V

30

V

105

A

76

A

480

A

120

A

3

J

5

417

- 55 ... +150

150

- 55 ... +150

300

260

2500

V/ns

W

C

C

C

°C

°C

V~

Mounting Force

20..120/4.5..27

N/lb

5

g

Symbol

Test Conditions

(TJ = 25C, Unless Otherwise Specified)

BVDSS

VGS = 0V, ID = 3mA

VGS(th)

VDS = VGS, ID = 8mA

IGSS

VGS = 20V, VDS = 0V

IDSS

VDS = VDSS, VGS = 0V

RDS(on)

VGS = 10V, ID = 60A, Note 1

Characteristic Values

Min. Typ. Max.

200

V

2.0

4.0 V

100 nA

TJ = 125C

100 A

2 mA

19.5 m

G

D

S

Isolated Tab

G = Gate D = Drain

S = Source

Features

 Silicon Chip on Direct-Copper Bond

(DCB) Substrate

 Isolated Mounting Surface

 2500V~ Electrical Isolation

 Avalanche Rated

 Fast Intrinsic Rectifier

 Low RDS(ON) and QG

Advantages

 Easy to Mount

 Space Savings

 High Power Density

Applications

 DC-DC Converters

 Battery Chargers

 Switch-Mode and Resonant-Mode

Power Supplies

 DC Choppers

 AC & DC Motor Controls

© 2013 IXYS CORPORATION, All Rights Reserved

DS98586C(9/13)

Share Link: