MSAEZ30N20A データシートの表示（PDF） - Microsemi Corporation

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MSAEZ30N20A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Microsemi Corporation 

MSAEZ33N20A

MSAFZ33N20A

Electrical Parameters @ 25°C (unless otherwise specified)

DESCRIPTION

Drain-to-Source Breakdown Voltage

(Gate Shorted to Source)

Temperature Coefficient of the Drain-to-Source

Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Current

Drain-to-Source Leakage Current (Zero Gate

Voltage Drain Current)

Static Drain-to-Source On-State Resistance (1)

Forward Transconductance (1)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (Miller) Charge

Body Diode Forward Voltage (1)

Reverse Recovery Time (Body Diode)

Reverse Recovery Charge

SYMBOL

BVDSS

∆BVDSS/∆TJ

VGS(th)

IGSS

IDSS

RDS(on)

gfs

Ciss

Coss

Crss

Td(on)

tr

td(off)

tf

Qg(on)

Qgs

Qgd

VSD

trr

Qrr

CONDITIONS

VGS = 0 V, ID = 250 µA

VDS = VGS, ID = 1 mA

VGS = ± 20VDC, VDS = 0 TJ = 25°C

T J = 125°C

VDS =0.8•BVDSS

TJ = 25°C

VGS = 0 V

T J = 125°C

VGS= 10V, ID= 21A T J = 25°C

I D= 33A T J = 25°C

I D= 21A T J = 125°C

VDS ≥ 15 V; ID = 21 A

VGS = 0 V, VDS = 25 V, f = 1 MHz

VGS = 10 V, V DS = 30 V,

ID = 3 A, R G = 50 Ω

VGS = 10 V, V DS = 160V, I D = 50A

IF = IS, VGS = 0 V

IF = 10 A,

-di/dt = 100 A/ µs,

IF = 10 A,

di/dt = 100 A/ µs,

MSAE

MSAF

MSAE

MSAF

MSAE

MSAF

MIN TYP.

200

TBD

2.0

3.0

0.06

TBD

0.11

15

23

2600

500

230

40

110

450

160

120

10

70

1.3

MAX

4.0

±100

±200

25

250

0.07

UNIT

V

V/°C

V

nA

µA

Ω

S

3900

pF

750

350

60

ns

170

680

240

nC

1.2

V

1.6

50

ns

230

tbd

µC

1.8

Notes

(1) Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2%

(2) Microsemi Corp. does not manufacture the mosfet die; contact company for details.

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