MMBV432LT1(2001) データシートの表示（PDF） - ON Semiconductor

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MMBV432LT1
(Rev.:2001)

Silicon Tuning Diode

ON Semiconductor 

ON Semiconductort

Silicon Tuning Diode

This device is designed for FM tuning, general frequency control

and tuning, or any top–of–the–line application requiring

back–to–back diode configuration for minimum signal distortion and

detuning. This device is supplied in the SOT–23 plastic package for

high volume, pick and place assembly requirements.

• High Figure of Merit  Q = 150 (Typ) @ VR = 2.0 Vdc, f = 100 MHz

• Guaranteed Capacitance Range

• Dual Diodes – Save Space and Reduce Cost

• Surface Mount Package

• Available in 8 mm Tape and Reel

• Monolithic Chip Provides Improved Matching – Guaranteed ± 1.0%

(Max)

Over Specified Tuning Range

MMBV432LT1

ON Semiconductor Preferred Device

DUAL

VOLTAGE VARIABLE

CAPACITANCE DIODE

3

1

2

CASE 318–08, STYLE 9

SOT–23 (TO–236AB)

MAXIMUM RATINGS (Each Diode)

Rating

Symbol

Value

Unit

Reverse Voltage

Forward Current

Total Power Dissipation @ TA = 25°C

Derate above 25°C

VR

14

Vdc

IF

200

mAdc

PD

225

mW

1.8

mW/°C

Junction Temperature

Storage Temperature Range

DEVICE MARKING

TJ

+125

°C

Tstg

–55 to +125

°C

MMBV432LT1 = M4B

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Reverse Breakdown Voltage

(IR = 10 µAdc)

Reverse Voltage Leakage Current

(VR = 9.0 Vdc)

Diode Capacitance

(VR = 2.0 Vdc, f = 1.0 MHz)

Capacitance Ratio C2/C8

(f = 1.0 MHz)

V(BR)R

IR

CT

CR

Figure of Merit

Q

(VR = 2.0 Vdc, f = 100 MHz)

1

2

3

Min

Typ

Max

Unit

14

—

—

Vdc

—

—

100

nAdc

43

—

48.1

pF

1.5

—

2.0

—

100

150

—

—

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

© Semiconductor Components Industries, LLC, 2001

1

March, 2001 – Rev. 2

Publication Order Number:

MMBV432LT1/D

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