MMSTA92 データシートの表示（PDF） - TY Semiconductor

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MMSTA92

PNP High Voltage Amplifier

TY Semiconductor 

SMD Type

■ Features

● High breakdown voltage

● Low collector-emitter saturation voltage

● Complementary to MMSTA42

Transistors

Product specification

MMSTA92

SOT-323

1.3±0.1

0.65

12

Unit:mm

3

0.3±0.1

2.1±0.1

0.1

+0.05

-0.02

1 Emitter

2 Base

3 Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Rating

-300

-300

-5.0

-300

200

150

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-to-base breakdown voltage

Collector cutoff current

Collector cutoff current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Output Capacitance

■ Marking

Marking

K3R

Symbol

Test conditions

V(BR)CBO Ic= 100 μA， IE=0

V(BR)CEO Ic= 1 mA， IB=0

V(BR)EBO IE= 100 μA， IC=0

IcBO VCB= -200 V , IE=0

IEBO VCE= -3.0V , IC=0

VCE= -10V, IC= -1.0mA

hFE VCE= -10V, IC= -10mA

VCE= -10V, IC= -30mA

VCE(sat) IC=-20 mA, IB= -2.0mA

VBE(sat) IC=-20 mA, IB= -2.0mA

fT VCE= -20V, IC= -10mA,f=100MHz

Cob VCB=-20V,f=1.0MHz,IE=0

Unit

V

V

V

mA

mW

℃

℃

Min Typ Max Unit

-300

V

-300

V

-5.0

V

-0.25 μA

-0.1 μA

60

100

200

60

-0.5 V

-0.9 V

50

MHz

6.0 pF

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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