MMBTA93 データシートの表示（PDF） - Galaxy Semi-Conductor

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MMBTA93

PNP High Voltage Amplifier

Galaxy Semi-Conductor 

PNP High Voltage Amplifier

Production specification

MMBTA93

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Symbol Parameter

Test conditions

MIN. MAX. UNIT

V(BR)CBO Collector-base breakdown voltage IC=-100μA,IE=0

-200

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA,IB=0

-200

V(BR)EBO Emitter-base breakdown voltage

ICBO

collector cut-off current

IEBO

emitter cut-off current

hFE

DC current gain

IE=-100μA,IC=0

IE = 0; VCB = -160V

IC = 0; VEB = -3V

VCE = -10V; IC= -1mA

VCE = -10V;IC= -10mA

VCE = -10V;IC= -30mA

-5

- -0.25 μA

-

-0.1 μA

25

40

-

25

VCE(sat)

collector-emitter saturation voltage IC = -20mA; IB = -2mA

-

-0.5 V

VBE(sat)

base-emitter saturation voltage

IC = -20mA; IB = -2mA

-

-0.9 V

Cob

Collector output capacitance

VCB=-20V,f=1.0MHz

-

fT

transition frequency

IC = -10mA; VCE = -20V;

50

f = 100MHz

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

6.0 pF

- MHz

C338

Rev.A

www.gmicroelec.com

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