MMBTA43L-AE3-R データシートの表示（PDF） - Unisonic Technologies

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MMBTA43L-AE3-R

HIGH VOLTAGE TRANSISTOR

Unisonic Technologies 

MMBTA42/43

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

MMBTA42

300

Collector-Base Voltage

MMBTA43

VCBO

200

V

MMBTA42

300

Collector-Emitter Voltage

MMBTA43

VCEO

200

V

Emitter-Base Voltage

VEBO

6

V

Collector Dissipation (Ta=25°C)

PC

350

mW

Collector Current

IC

500

mA

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied

„ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

Collector-Base Breakdown MMBTA42

Voltage

MMBTA43

Collector-Emitter Breakdown MMBTA42

Voltage

MMBTA43

Emitter-Base Breakdown Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Cut-Off Current

MMBTA42

MMBTA43

Emitter Cut-Off Current

MMBTA42

MMBTA43

DC Current Gain

Current Gain Bandwidth Product

MMBTA42

Collector Base Capacitance

MMBTA43

SYMBOL TEST CONDITIONS

BVCBO IC=100μA, IE=0

BVCEO IC =1mA, IB=0

BVEBO

VCE(SAT)

VBE(SAT)

ICBO

IEBO

hFE

fT

IE=100μA, IC =0

IC =20mA, IB=2mA

IC =20mA, IB=2mA

VCB=200V, IE=0

VCB=160V, IE=0

VEB=6V, IC =0

VEB=4V, IC =0

VCE=10V, IC =1mA

VCE=10V, IC =10mA

VCE=10V, IC =30mA

VCE=20V, IC=10mA

f=100MHz

Ccb

VCB=20V, IE=0, f=1MHz

MIN TYP MAX UNIT

300

V

200

300

V

200

6

V

0.2 V

0.90 V

100

nA

100

100

nA

100

80

80

300

80

50

MHz

3

pF

4

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-004,F

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