NE68030-A データシートの表示（PDF） - California Eastern Laboratories.

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NE68030-A

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD

California Eastern Laboratories. 

NE68030 / 2SC4228

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter

DC Characteristics

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

RF Characteristics

Gain Bandwidth Product

Insertion Power Gain

Noise Figure

Reverse Transfer Capacitance

Symbol

Test Conditions

ICBO VCB = 10 V, IE = 0 mA

IEBO VEB = 1 V, IC = 0 mA

hFE Note 1 VCE = 3 V, IC = 5 mA

fT

VCE = 3 V, IC = 5 mA, f = 2 GHz

⏐S21e⏐2 VCE = 3 V, IC = 5 mA, f = 2 GHz

NF VCE = 3 V, IC = 5 mA, f = 2 GHz

Cre Note 2 VCB = 3 V, IE = 0 mA, f = 1 MHz

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

Marking

hFE Value

R43

R43

50 to 100

R44

R44

80 to 160

R45

R45

125 to 250

MIN. TYP. MAX. Unit

−

−

1.0

μA

−

−

1.0

μA

50

100

250

−

5.5

8.0

–

GHz

5.5

7.5

−

dB

−

1.9

3.2

dB

−

0.3

0.7

pF

2

Data Sheet PU10452EJ01V0DS

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