OM6230SS データシートの表示（PDF） - Omnirel Corp => IRF
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OM6230SS Datasheet PDF : 4 Pages
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ELECTRICAL CHARACTERISTICS:
Characteristic
OFF CHARACTERISTICS
400V (Per MOSFET) (TC = 25° unless otherwise noted)
Symbol
Min.
Typ.
Max.
Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)
V(BR)DSS
400
-
-
Zero Gate Voltage Drain
IDSS
(VDS = 400 V, VGS = 0)
-
-
0.25
(VDS = 320 V, VGS = 0, TJ = 125° C)
-
-
1.0
Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
IGSSF
-
-
100
Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSR
-
-
100
ON CHARACTERISTICS*
Gate-Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc
(TJ = 125° C)
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 13 Adc)
Drain-Source On-Voltage (VGS = 10 Vdc)
(ID = 24 A)
(ID = 12 A, TJ = 125° C)
Forward Transconductance (VDS = 15 Vdc, ID = 12A Adc)
DYNAMIC CHARACTERISTICS
VGS(th)
rDS(on)
VDS(on)
gFS
2.0
3.0
4.0
1.5
-
3.5
-
-
0.20
-
-
5.0
-
-
5.0
14
-
-
Input Capacitance
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS
Ciss
Coss
Crss
-
4000
-
-
550
-
-
110
-
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 250 V, ID = 24 A,
Rgen = 4.3 ohms)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 400 V, ID = 24 A,
VGS = 10 V)
SOURCE DRAIN DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
-
35
-
-
95
-
-
80
-
-
80
-
-
110
14
-
20
-
-
80
-
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
(IS = 24 A, d/dt = 100 A/µs)
VSD
-
1.1
1.6
ton
**
trr
-
500
1000
* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%
** Limited by circuit inductance
Unit
Vdc
mAdc
nAdc
nAdc
Vdc
Ohm
Vdc
mhos
pF
ns
0nC
Vdc
ns
ELECTRICAL CHARACTERISTICS:
Characteristic
OFF CHARACTERISTICS
500V (Per MOSFET) (TC = 25° unless otherwise noted)
Symbol
Min.
Typ.
Max.
Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)
V(BR)DSS
500
-
-
Zero Gate Voltage Drain
IDSS
(VDS = 500 V, VGS = 0)
-
-
0.25
(VDS = 500 V, VGS = 0, TJ = 125° C)
-
-
1.0
Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
IGSSF
-
-
100
Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSR
-
-
100
ON CHARACTERISTICS*
Gate-Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc
(TJ = 125° C)
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 13 Adc)
Drain-Source On-Voltage (VGS = 10 Vdc)
(ID = 24 A)
(ID = 12 A, TJ = 125° C)
Forward Transconductance (VDS = 15 Vdc, ID = 13 Adc)
DYNAMIC CHARACTERISTICS
VGS(th)
rDS(on)
VDS(on)
gFS
2.0
3.0
4.0
1.5
-
3.5
-
-
0.27
-
-
8.0
-
-
8.0
13
-
-
Input Capacitance
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS
Ciss
Coss
Crss
-
4000
-
-
480
-
-
95
-
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 250 V, ID = 24 A,
Rgen = 4.3 ohms)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 400 V, ID = 24 A,
VGS = 10 V)
SOURCE DRAIN DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
-
32
-
-
95
-
-
75
-
-
75
-
-
115
140
-
20
-
-
60
-
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
(IS = 24 A, d/dt = 100 A/µs)
VSD
-
1.1
1.6
ton
**
trr
-
500
1000
* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%
** Limited by circuit inductance
Unit
Vdc
mAdc
nAdc
nAdc
Vdc
Ohm
Vdc
mhos
pF
ns
nC
Vdc
ns
UNCLAMPED DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°)
Single Pulse Drain-To-Source Avalanche Energy TJ = 25°C
TJ = 100°C
Repetitive Pulse Drain-To-Source Avalanche Energy
(1) VDD = 50V, ID = 10A
(2) Pulse width and frequency is limited by TJ(max) and thermal response.
Symbol
WDSS (1)
WDSS (2)
Value
Unit
1000
160
mJ
25
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