IGP15N60T(2006) データシートの表示（PDF） - Infineon Technologies

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IGP15N60T
(Rev.:2006)

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

TrenchStop® Series

IGP15N60T

q

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=25°C,

VCC=400V,IC=15A,

VGE=0 /15V,

RG=15Ω,

Lσ1)=154nH,

Cσ1)=39pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

Typ.

17

11

188

50

0.22

0.35

0.57

Unit

max.

- ns

-

-

-

- mJ

-

-

Switching Characteristic, Inductive Load, at Tj=175 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=175°C,

VCC=400V,IC=15A,

VGE=0/15V,

RG= 15 Ω

Lσ1)=154nH,

Cσ1)=39pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

Typ.

17

15

212

79

0.34

0.47

0.81

Unit

max.

- ns

-

-

-

- mJ

-

-

1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

Power Semiconductors

3

Rev. 2.1 June 06

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