MRF1511NT1_09 データシートの表示（PDF） - Freescale Semiconductor

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MRF1511NT1_09

RF Power Field Effect Transistor

Freescale Semiconductor 

Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Current

(VDS = 35 Vdc, VGS = 0)

Gate - Source Leakage Current

(VGS = 10 Vdc, VDS = 0)

IDSS

—

—

IGSS

—

—

1

μAdc

1

μAdc

On Characteristics

Gate Threshold Voltage

(VDS = 7.5 Vdc, ID = 170 μA)

VGS(th)

1

1.6

2.1

Vdc

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 1 Adc)

VDS(on)

—

0.4

—

Vdc

Dynamic Characteristics

Input Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)

Output Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)

Ciss

—

100

—

pF

Coss

—

53

—

pF

Reverse Transfer Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)

Crss

—

8

—

pF

Functional Tests (In Freescale Test Fixture)

Common - Source Amplifier Power Gain

(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz)

Drain Efficiency

(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz)

Gps

—

13

—

dB

η

—

70

—

%

MRF1511NT1

2

RF Device Data

Freescale Semiconductor

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