2SD916 データシートの表示（PDF） - Inchange Semiconductor
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2SD916 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD916
DESCRIPTION
·High DC Current Gain
·Low Saturation Voltage
·High Reliability
APPLICATIONS
·Audio power amplifiers
·Relay& solenoid drivers
·Motor controls
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VCEO(SUS) Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.2
A
30
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
4.0 ℃/W
isc Website：www.iscsemi.cn
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