FEP16JT データシートの表示（PDF） - Inchange Semiconductor
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FEP16JT Datasheet PDF : 2 Pages
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Fast Recovery Rectifier
FEP16JT
FEATURES
·High surge current capability
·Low forward voltage, high current capability
·Low power loss
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching power supply
·Power switching circuits
·General purpose
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM
Peak Repetitive Reverse Voltage
VALUE UNIT
600
V
IF(AV)
IFSM
TJ
Average Rectified Forward Current
16
A
Nonrepetitive Peak Surge Current
(8.3ms single half sine-wave superimposed 125
A
on rated load )
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
-55~150 ℃
MAX UNIT
2.2
℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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