CM100DU-24H データシートの表示（PDF） - Powerex

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CM100DU-24H

Dual IGBTMOD™ U-Series Module 100 Amperes/1200 Volts

Powerex 

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM100DU-24H

Dual IGBTMOD™ U-Series Module

100 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings

Symbol

CM100DU-24H

Junction Temperature

Storage Temperature

Collector-Emitter Voltage (G-E SHORT)

Gate-Emitter Voltage (C-E SHORT)

Collector Current (Tc = 25°C)

Peak Collector Current

Emitter Current** (Tc = 25°C)

Peak Emitter Current**

Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)

Mounting Torque, M5 Main Terminal

Tj

Tstg

VCES

VGES

IC

ICM

IE

IEM

Pc

–

-40 to 150

-40 to 125

1200

±20

100

200*

100

200*

600

31

Mounting Torque, M6 Mounting

–

40

Weight

–

310

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)

Viso

2500

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Units

°C

°C

Volts

Volts

Amperes

Amperes

Amperes

Amperes

Watts

in-lb

in-lb

Grams

Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max. Units

Collector-Cutoff Current

Gate Leakage Voltage

Gate-Emitter Threshold Voltage

Collector-Emitter Saturation Voltage

Total Gate Charge

Emitter-Collector Voltage**

ICES

IGES

VGE(th)

VCE(sat)

QG

VEC

VCE = VCES, VGE = 0V

VGE = VGES, VCE = 0V

IC = 10mA, VCE = 10V

IC = 100A, VGE = 15V, Tj = 25°C

IC = 100A, VGE = 15V, Tj = 125°C

VCC = 600V, IC = 100A, VGE = 15V

IE = 100A, VGE = 0V

–

–

1

–

–

0.5

4.5

6

7.5

–

2.9

3.7

–

2.85 –

–

375

–

–

–

3.2

mA

µA

Volts

Volts

Volts

nC

Volts

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Resistive

Turn-on Delay Time

Load

Rise Time

Switch

Turn-off Delay Time

Times

Fall Time

Diode Reverse Recovery Time**

Diode Reverse Recovery Charge**

Cies

Coes

Cres

td(on)

tr

td(off)

tf

trr

Qrr

VCE = 10V, VGE = 0V

VCC = 600V, IC = 100A,

VGE1 = VGE2 = 15V,

RG = 3.1⍀, Resistive

Load Switching Operation

IE = 100A, diE/dt = -200A/µs

IE = 100A, diE/dt = -200A/µs

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Min.

Typ.

Max. Units

–

–

15

nf

–

–

5

nf

–

–

3

nf

–

–

100

ns

–

–

200

ns

–

–

300

ns

–

–

350

ns

–

–

300

ns

–

0.55 –

µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Thermal Resistance, Junction to Case

Rth(j-c)Q

Per IGBT 1/2 Module

–

Thermal Resistance, Junction to Case

Rth(j-c)D

Per FWDi 1/2 Module

–

Contact Thermal Resistance

Rth(c-f)

Per Module, Thermal Grease Applied

–

Typ.

–

–

0.035

Max.

0.19

0.35

–

Units

°C/W

°C/W

°C/W

50

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