BD633 データシートの表示（PDF） - New Jersey Semiconductor
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BD633 Datasheet PDF : 2 Pages
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^Products., One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973)376-8960
BD633
DESCRIPTION
• DC Current Gain -
:-
: hFE = 40(Min.)@lc=25mA
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= 45V(Min.)
• Complement to Type BD634
^' ^•
•:
! 23
] PIN 1.BA3E
2. COLLECTOR
3 EMITTER
TO-220C package
APPLICATIONS
• Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
45
V
VCEO Collector-Emitter Voltage
45
V
VEBO Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
5
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta~25°C
PC
Collector Power Dissipation
@ TC=25°C
Tj
Junction Temperature
0.3
A
2
W
30
150
"C
Tstg
Storage Temperature Range
-55-150
'C
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- V H L -':
p
U I rt-cfE!
.-• A * " '
ut: J f
*H
•,
K
T
«
i "^.w
tU
H <~ U..
1
500' '
1
fc r* J
C
,
i
mm
DIM WIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
ti 4.98 5.18
H 2.70 2.90
1 0.44 0.46
K 13.20 13.40
L 1.10 1.30
.70 "> OA
R 2.50 2.70
S 1.29 1.31
U 6.45 6.65
V 8.66 8.86
N.I Senii-CDiidiictors reserves the right to change tost conditions, parameter limits and package dimension* uilhout
luiiicc. Inforniatioii furnished hy N.I Sonii-(.'oiuluctors is helie\ed to he hoili iiccunite and reliable ;i( the lime
i<> pros^. llnuever, N,l Sciiii-C'otidiicfors assumes no responsibility for an> errors or oniis.sioiis Jiscoveivd in its u
N.I Semi-Ci'iKliielors einjuiiranes CINOIIKTS to verily thai Jalasheel-; are amvnt Ivliire placing: orilers.
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