BD637 データシートの表示（PDF） - New Jersey Semiconductor
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BD637 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc-25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
lc=0.1mA;lE=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; lc= 0
VcE(sat)
Collector-Emitter Saturation Voltage
IC=1A;IB=0.1A
VBE(on) Base-Emitter On Voltage
lc= 1A; VCE= 2V
ICES
Collector Cutoff Current
VCE=100V;VBE=0
hpE-1
DC Current Gain
lc= 25mA; VCE= 2V
hpE-2
DC Current Gain
lo=1A;VCE=2V
BD637
MIN MAX UNIT
80
V
100
V
5
V
0.6
V
1.3
V
0.2
mA
40
25
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