BD312 データシートの表示（PDF） - New Jersey Semiconductor

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BD312

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcEO(SUS) Collector-Emitter Sustaining Voltage lc= -200mA; IB=0

VcE(sat) Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A

VeE(sat) Base-Emitter Saturation Voltage

lc= -5A; IB= -0.5A

VBE(on) Base-Emitter On Voltage

lc= -5A; VCE= -4V

ICBO

Collector Cutoff Current

VCB= -60V; IB= 0

IEBO

Emitter Cutoff Current

VEB= -7.0V; lc= 0

hpE-1

DC Current Gain

lc= -5A; VCE= -4V

hpE-2

Is/b

fr

DC Current Gain

lc= -1 OA; VCE= -4V

Second Breakdown Collector

Current with Base Forward Biased

VCE= -39V,t= 0.5s

VCE= -50V,t= 0.5s

Current Gain-Bandwidth Product

lc= -0.5A; VCE= -10V;f=1.0MHz

BD312

MIN MAX UNIT

-60

V

-1.0

V

-1.8

V

-1.5

V

-1.0

mA

-1.0 mA

25

5

-2.95

-0.60

4

A

MHz

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