BDP948(2001) データシートの表示（PDF） - Infineon Technologies
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BDP948 Datasheet PDF : 4 Pages
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BDP948, BDP950
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0
BDP948
45
-
BDP950
60
-
V
-
-
Collector-base breakdown voltage
V(BR)CBO
IC = 100 µA, IB = 0
BDP948
45
-
-
BDP950
60
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 45 V, IE = 0
Collector cutoff current
VCB = 45 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain 1)
IC = 10 mA, VCE = 5 V
IC = 500 mA, VCE = 1 V
IC = 1 A, VCE = 2 V
Collector-emitter saturation voltage1)
IC = 2 A, IB = 0.2 A
Base-emitter saturation voltage 1)
IC = 2 A, IB = 0.2 A
V(BR)EBO 5
ICBO
-
ICBO
-
IEBO
-
hFE
25
85
50
VCEsat
-
VBEsat
-
-
-
-
100 nA
-
20 µA
-
100 nA
-
-
-
-
475
-
-
-
0.5 V
-
1.3
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT
- 100 - MHz
Ccb
-
40
- pF
1) Pulse test: t ≤=300µs, D = 2%
2
Jul-06-2001
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