BC549(2003) データシートの表示（PDF） - Diotec Semiconductor Germany

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BC549
(Rev.:2003)

Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

General Purpose Transistors

Characteristics, Tj = 25/C

Collector saturation voltage – Kollektor-Sättigungsspannung

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

Base saturation voltage – Basis-Sättigungsspannung

VCEsat

VCEsat

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

Base-Emitter voltage – Basis-Emitter-Spannung

VBEsat

VBEsat

VCE = 5 V, IC = 2 mA

VBE

VCE = 5 V, IC = 10 mA

VBE

Collector-Emitter cutoff current – Kollektorreststrom

VCE = 80 V

BC 546

ICES

VCE = 50 V

BC 547

ICES

VCE = 30 V

BC 548

ICES

VCE = 30 V

BC 549

ICES

Collector-Emitter cutoff current – Kollektorreststrom

VCE = 80 V, Tj = 125/C

VCE = 50 V, Tj = 125/C

VCE = 30 V, Tj = 125/C

VCE = 30 V, Tj = 125/C

BC 546

ICES

BC 547

ICES

BC 548

ICES

BC 549

ICES

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, f = 1 MHz

CCB0

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, f = 1 MHz

Noise figure – Rauschmaß

VCE = 5 V, IC = 200 :A

RG = 2 kS f = 1 kHz,

) f = 200 Hz

CEB0

BC 547 F

BC 548 F

BC 549 F

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BC 546 ... BC 549

Kennwerte, Tj = 25/C

Min.

Typ.

Max.

–

80 mV 200 mV

–

200 mV 600 mV

–

700 mV

–

–

900 mV

–

580 mV

–

660 mV

–

700 mV

720 mV

–

0.2 nA

15 nA

–

0.2 nA

15 nA

–

0.2 nA

15 nA

–

0.2 nA

15 nA

–

–

4 :A

–

–

4 :A

–

–

4 :A

–

–

4 :A

–

300 MHz

–

–

3.5 pF

6 pF

–

9 pF

–

–

2 dB

10 dB

–

1.2 dB

4 dB

–

1.2 dB

4 dB

RthA

250 K/W 1)

BC 556 ... BC 559

Available current gain groups per type

Lieferbare Stromverstärkungsgruppen pro Typ

BC 546A

BC 547A

BC 548A

BC 546B

BC 547B

BC 548B

BC 549B

BC 547C

BC 548C

BC 549C

1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden

01.11.2003

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