BBY53-03W データシートの表示（PDF） - Siemens AG

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BBY53-03W

Silicon Tuning Diode

Siemens AG 

BBY 53-03W

Electrical Characteristics at TA=25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC characteristics

Reverse current

VR = 4 V, TA = 25 °C

VR = 4 V, TA = 65 °C

IR

-

-

-

-

nA

10

200

AC characteristics

Diode capacitance

VR = 1 V, f = 1 MHz

VR = 3 V, f = 1 MHz

Capacitance ratio

VR = 1 V, VR = 3 V, f = 1 MHz

Series resistance

VR = 1 V, f = 1 GHz

Case capacitance

f = 1 MHz

Series inductance chip to ground

CT

pF

4.8

5.3

5.8

1.85

2.4

3.1

CT1/CT3

-

1.8

2.2

2.6

rs

-

Ω

0.37 -

CC

-

pF

0.12 -

Ls

-

2

-

nH

Semiconductor Group

2

Sep-11-1996

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