BB837(2002) データシートの表示（PDF） - Infineon Technologies

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BB837
(Rev.:2002)

Silicon Tuning Diode

Infineon Technologies 

BB837 /BB857...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Reverse current

VR = 30 V

VR = 30 V, TA = 85 °C

IR

nA

-

-

10

-

- 200

AC Characteristics

Diode capacitance

VR = 1 V, f = 1 MHz

VR = 25 V, f = 1 MHz

VR = 28 V, f = 1 MHz

Capacitance ratio

VR = 1 V, VR = 25 V, f = 1 MHz

Capacitance ratio

VR = 1 V, VR = 28 V, f = 1 MHz

Capacitance matching1)

VR = 1V ... 28V, f = 1 MHz

Series resistance

VR = 5 V, f = 470 MHz

CT

6

0.5

0.45

CT1/CT25 10.2

6.6

0.55

0.52

12

pF

7.2

0.65

-

--

CT1/CT28 9.7 12.7

-

CT/CT

-

-

5%

rS

-

1.5

-

1For details please refer to Application Note 047

2

Nov-07-2002

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