BB202M データシートの表示（PDF） - Hitachi -> Renesas Electronics

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BB202M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi -> Renesas Electronics 

BB202M

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate1 to source voltage

Symbol

VDS

VG1S

Gate2 to source voltage

VG2S

Drain current

ID

Channel power dissipation

Pch

Channel temperature

Tch

Storage temperature

Tstg

Ratings

Unit

12

V

+10

V

–0

±10

V

25

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 12

Gate1 to source breakdown voltage V(BR)G1SS +10

Gate2 to source breakdown voltage V(BR)G2SS ±10

Gate1 to source cutoff current

I G1SS

—

Gate2 to source cutoff current

I G2SS

—

Gate1 to source cutoff voltage

VG1S(off)

0.1

Gate2 to source cutoff voltage

VG2S(off)

0.5

Drain current

I D(op)

10

Forward transfer admittance

|yfs|

16

Input capacitance

Output capacitance

Reverse transfer capacitance

Power gain

Noise figure

c iss

1.2

c oss

0.7

c rss

—

PG

16

NF

—

Typ Max Unit

—

—

V

—

—

V

—

—

V

—

+100 nA

—

±100 nA

0.4 0.8 V

0.8 1.1 V

15

20

mA

21

—

mS

1.6 2.2 pF

1.1 1.5 pF

0.011 0.03 pF

20

—

dB

2.1 3.1 dB

Test Conditions

ID = 200µA, VG1S = VG2S = 0

IG1 = +10µA, VG2S = VDS = 0

IG2 = ±10µA, VG1S = VDS = 0

VG1S = +9V, VG2S = VDS = 0

VG2S = ±9V, VG1S = VDS = 0

VDS = 9V, VG2S = 6V, ID = 100µA

VDS = 9V, VG1S = 9V, ID = 100µA

VDS = 9V, VG1 = 9V, VG2S = 6V

RG = 560kΩ

VDS = 9V, VG1 = 9V, VG2S =6V

RG = 560kΩ, f = 1kHz

VDS = 9V, VG1 = 9V

VG2S =6V, RG = 560kΩ

f = 1MHz

VDS = 9V, VG1 = 9V, VG2S =6V

RG = 560kΩ, f = 900MHz

2

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