HER101G データシートの表示（PDF） - Zibo Seno Electronic Engineering Co.,Ltd

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HER101G

1.0A GLASS PASSIVATED ULTRAFAST DIODE

Zibo Seno Electronic Engineering Co.,Ltd 

Z ibo Seno Electronic Engineering Co., Ltd.

1.00

0.75

0.50

0.25

HER101G – HER108G

10

Single phase half wave

Resistive or Inductive load

HER101G - HER104G

HER105G

2.0

HER106G - HER108G

1.0

0

0

30

25 50 75 100 125 150 175

TA, AMBIENT TEMPERATURE (°C)

Fig. 1 Forward Current Derating Curve

Pulse width

8.3 ms single half-sine-wave

(JEDEC method)

0.01

0.6

Tj = 25°C

Pulse width = 300µs

0.8

1.0

1.2

1.4

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

100

Tj = 25°C

f = 1.0MHz

HER101 - HER105G

20

10

HER106- HER108G

10

0

1

10

100

NUMBER OF CYCLES AT 60Hz

Fig. 3 Peak Forward Surge Current

50Ω NI (Non-inductive)

10Ω NI

(+)

50V DC

Approx

(-)

Device

Under

Test

1.0Ω

NI

Oscilloscope

(Note 1)

(-)

Pulse

Generator

(Note 2)

(+)

1

1

+0.5A

10

100

VR, REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance

trr

0A

-0.25A

Notes:

1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.

2. Rise Time = 10ns max. Input Impedance = 50Ω.

-1.0A

Set time base for 5/10ns/cm

HER101G – HER108G

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

2 of 2

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