FQAF19N60 データシートの表示（PDF） - Fairchild Semiconductor
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FQAF19N60 Datasheet PDF : 8 Pages
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Typical Characteristics
VGS
Top : 15 V
10 V
8.0 V
7.0 V
6.5 V
101
6.0 V
Bottom : 5.5 V
100
10-1
Notes :
1. 250s Pulse Test
2. TC = 25
100
101
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.2
1.0
VGS = 10V
0.8
VGS = 20V
0.6
0.4
0.2
Note : TJ = 25
0.0
0
10
20
30
40
50
60
70
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
5000
4000
3000
2000
1000
Ciss
C
oss
C
rss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
150
100
10-1
2
25
-55
Notes :
1. VDS = 50V
2. 250s Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150 25
Notes :
1. V =0V
GS
2. 250s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
VDS = 120V
10
VDS = 300V
8
VDS = 480V
6
4
2
Note : ID = 18.5 A
0
0
15
30
45
60
75
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, April 2000
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