MS1226 データシートの表示（PDF） - Advanced Power Technology
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MS1226 Datasheet PDF : 3 Pages
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RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
30 MHz
28 VOLTS
IMD = -28 dB
POUT = 30 WATTS
GP = 18 dB MINIMUM
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1226 is a 28V epitaxial silicon NPN planar transistor
designed primarily for SSB communications. This device
utilizes emitter ballasting for improved ruggedness and
reliability.
MS1226
ABSOLUTE MAXIMUM RATINGS
Symbol
Paramete
r
VCBO
Co llector-base Voltage
VCEO
Co llector-emitter Voltage
VEBO
Emit ter-Base Voltage
IC
Dev ice Current
PDISS
Po wer Dissipation
TJ
Ju nction Temperature
TSTG
Storage Temperature
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
053-7055 Rev - 10-2002
Value
U
nit
65
V
36
V
4.0
V
4.5
A
80
W
+200
C
-65 to +150
C
2.2
C/W
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