SD103AWS データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd
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SD103AWS Datasheet PDF : 4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
SD103AWS-SD103CWS SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage Drop
z Guard Ring Construction for Transient Protection
z Negligible Reverse Recovery Time
z Low Reverse Capacitance
MARKING:
SD103AWS:S4 SD103BWS:S5 SD103CWS:S6
SOD-323
S4
S5
S4
S5
S6
S6
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol SD103AWS SD103BWS
Peak Repetitive Peak Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
40
30
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
28
21
Forward Continuous Current
IFM
350
1RQUepetitive Peak Forward Surge
Current @t Ps
IFSM
2.0
Power Dissipation
Pd
200
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
RθJA
Tj
TSTG
500
125
-55~+150
Electrical Ratings @Ta=25℃
Parameter
Symbol Min Typ Max Unit
Reverse breakdown voltage
SD103AWS
SD103BWS
SD103CWS
40
V (BR)
30
20
Forward voltage
VF
Reverse current
SD103AWS
SD103BWS
IRM
SD103CWS
Capacitance between terminals
CT
V
0.37
V
0.60
5.0
μA
50
pF
Reverse recovery time
trr
10
ns
www.cj-elec.com
1
SD103CWS
20
14
Unit
V
V
mA
A
mW
℃/W
℃
℃
Conditions
IR=100μA
IR=100μA
IR=100μA
IF=20mA
IF=200mA
VR=30V
VR=20V
VR=10V
VR=0V,f=1.0MHz
IF=IR=200mA
Irr=0.1XIR,RL=100Ω
F,Mar,2015
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